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2SA1179N - Bipolar Transistor

Features

  • Miniature package facilitates miniaturization in end products.
  • High breakdown voltage Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings (--)55 (--)50 (--)5 (--)150 (--)300 (--)30 200 150 --.

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Datasheet Details

Part number 2SA1179N
Manufacturer onsemi
File Size 333.87 KB
Description Bipolar Transistor
Datasheet download datasheet 2SA1179N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN7198B 2SA1179N/2SC2812N Bipolar Transistor (–)50V, (–)150mA, Low VCE(sat), (PNP)NPN Single CPA http://onsemi.com Features • Miniature package facilitates miniaturization in end products • High breakdown voltage Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings (--)55 (--)50 (--)5 (--)150 (--)300 (--)30 200 150 --55 to +150 Unit V V V mA mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
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