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  ON Semiconductor Electronic Components Datasheet  

2SA1179N Datasheet

Bipolar Transistor

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Ordering number : EN7198B
2SA1179N/2SC2812N
Bipolar Transistor
(–)50V, (–)150mA, Low VCE(sat), (PNP)NPN Single CPA
http://onsemi.com
Features
Miniature package facilitates miniaturization in end products
High breakdown voltage
Specications ( ) : 2SA1179N
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Ratings
(--)55
(--)50
(--)5
(--)150
(--)300
(--)30
200
150
--55 to +150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7053-001
0.45
3
0.13 2SA1179N6-TB-E
2SA1179N6-CPA-TB-E
2SC2812N6-TB-E
2SC2812N6-CPA-TB-E
0 to 0.1
Product & Package Information
• Package
: CPA
• JEITA, JEDEC
: SC-59, TO-236, SOT-23,
TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TB
1
0.95
1.9
2.93
2
1.3 MAX
1 : Base
2 : Emitter
3 : Collector
CPA
TB
Marking
M
L
2SA1179N
2SC2812N
Semiconductor Components Industries, LLC, 2013
August, 2013
91912 TKIM/92006 MSIM TC-00000143,00000144/72602 TSIM TA-2636, 2637 No.7198-1/7


  ON Semiconductor Electronic Components Datasheet  

2SA1179N Datasheet

Bipolar Transistor

No Preview Available !

2SA1179N / 2SC2812N
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=(--)35V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)6V, IC=(--)1mA
2SC2812N : VCE=6V, IC=1mA
2SA1179N : VCE=--6V, IC=--10mA
VCB=(--)6V, f=1MHz
IC=(--)50mA, IB=(--)5mA
IC=(--)50mA, IB=(--)5mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=
IE=(--)10μA, IC=0A
* : The 2SA1179N / 2SC2812N are classied by 1mA hFE as follws :
Rank
6
hFE 200 to 400
Ordering Information
Device
2SA1179N6-TB-E
2SA1179N6-CPA-TB-E
2SC2812N6-TB-E
2SC2812N6-CPA-TB-E
Package
CPA
CPA
CPA
CPA
Shipping
3,000pcs./reel
3,000pcs./reel
3,000pcs./reel
3,000pcs./reel
Ratings
min typ
200
100
(180)
(4.0)3.0
(--0.15)0.1
(--)55
(--)50
(--)5
max
(--)0.1
(--)0.1
400
(--)0.5
(--)1.0
Unit
μA
μA
MHz
MHz
pF
V
V
V
V
V
memo
Pb Free
--16
--12
--8
--4
0
0
--240
--200
--160
--120
--80
--40
0
0
IC -- VCE
2SA1179N
--50-μ-4A--54μ0AμA
--35μA
--30μA
--25μA
--20μA
--15μA
--10μA
--5μA
IB=0μA
--10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE -- V IT04195
IC -- VBE
2SA1179N
VCE= --6V
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter Voltage, VBE -- V IT04197
IC -- VCE
20
50μA
45μA
16
40μA
35μA
12 30μA
25μA
8 20μA
2SC2812N
15μA
4 10μA
5μA IB=0μA
0
0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE -- V IT04196
IC -- VBE
240
2SC2812N
VCE=6V
200
160
120
80
40
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT04198
No.7198-2/7


Part Number 2SA1179N
Description Bipolar Transistor
Maker ON Semiconductor
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2SA1179N Datasheet PDF






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