Download the 2SB631K datasheet PDF.
This datasheet also covers the 2SB631 variant, as both devices belong to the same pnp / npn epitaxial planar silicon transistors family and are provided as variant models within a single manufacturer datasheet.
Key Features
High breakdown voltage VCEO 100/120V, High current 1A.
Low saturation voltage, excellent hFE linearity. Package Dimensions
unit:mm
2009B
[2SB631, 631K/2SD600, 600K]
8.0 4.0
2.7
1.5 3.0 7.0
11.0
1.6 0.8
0.8
0.6
3.0
0.5
15.5
( ) : 2SB631, 631K
Specifications
12 3
2.4 4.8
1.2
1 : Emitter 2 : Collector 3 : Base SANYO : TO-126
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Co.
Full PDF Text Transcription for 2SB631K (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SB631K. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High...
View more extracted text
0V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SB631, 631K Specifications 12 3 2.4 4.8 1.
2SB631K Datasheet
