Ordering number : ENN346G
2SB631, 631K/
2SD600, 600K
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency
Power Amplifier Applications
Features
· High breakdown voltage VCEO 100/120V, High
current 1A.
· Low saturation voltage, excellent hFE linearity.
Package Dimensions
unit:mm
2009B
[2SB631, 631K/2SD600, 600K]
8.0
4.0
2.7
1.6
0.8
0.8
0.6
3.0
0.5
( ) : 2SB631, 631K
Specifications
12 3
2.4
4.8
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Tc=25˚C
2SB631, D600
(–)100
(–)100
2SB631K, D600K
(–)120
(–)120
(–)5
(–)1
(–)2
1
8
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Brakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
Conditions
V(BR)CBO IC=(–)10μA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ICBO
IEBO
IE=(–)10μA, IC=0
VCB=(–)50V, IE=0
VEB=(–)4V, IC=0
B631, D600
B631K, D600K
B631, D600
B631K, D600K
Ratings
min typ max
Unit
(–)100
V
(–)120
V
(–)100
V
(–)120
V
(–)5 V
(–)1 μA
(–)1 μA
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com
Publication Order Number:
2SB631_2SB631K_2SD600_2SD600K/D
