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  ON Semiconductor Electronic Components Datasheet  

2SB631K Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

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Ordering number : ENN346G
2SB631, 631K/
2SD600, 600K
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency
Power Amplifier Applications
Features
· High breakdown voltage VCEO 100/120V, High
current 1A.
· Low saturation voltage, excellent hFE linearity.
Package Dimensions
unit:mm
2009B
[2SB631, 631K/2SD600, 600K]
8.0
4.0
2.7
1.6
0.8
0.8
0.6
3.0
0.5
( ) : 2SB631, 631K
Specifications
12 3
2.4
4.8
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Tc=25˚C
2SB631, D600
(–)100
(–)100
2SB631K, D600K
(–)120
(–)120
(–)5
(–)1
(–)2
1
8
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Brakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
Conditions
V(BR)CBO IC=(–)10μA, IE=0
V(BR)CEO IC=(–)1mA, RBE=
V(BR)EBO
ICBO
IEBO
IE=(–)10μA, IC=0
VCB=(–)50V, IE=0
VEB=(–)4V, IC=0
B631, D600
B631K, D600K
B631, D600
B631K, D600K
Ratings
min typ max
Unit
(–)100
V
(–)120
V
(–)100
V
(–)120
V
(–)5 V
(–)1 μA
(–)1 μA
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com
Publication Order Number:
2SB631_2SB631K_2SD600_2SD600K/D


  ON Semiconductor Electronic Components Datasheet  

2SB631K Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

No Preview Available !

2SB631, 631K/2SD600, 600K
Continued on next page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Fall Time
Symbol
Conditions
hFE1
hFE2
VCE=(–)5V, IC=(–)50mA
VCE=(–)5V, IC=(–)500mA
fT VCE=(–)10V, IC=(–)50mA
Cob
VCE(sat)
VBE(sat)
VCB=(–)10V, f=1MHz
IC=(–)500mA, IB=(–)50mA
IC=(–)500mA, IB=(–)50mA
tf See specified Test Circuit
Turn-OFF Time
toff See specified Test Circuit
Storage Time
tstg See specified Test Circuit
* : The 2SB631/2SD600 are classified by 50mA hFE as follows :
Rank
hFE
DEF
60 to 120 100 to 200 160 to 320
Ratings
min typ
60*
20
(110)
130
(30)20
(–)0.15
(–)0.85
(80)
100
(100)
500
(600)
700
max
320*
(–)0.4
(–)1.2
Unit
MHz
MHz
pF
V
V
ns
ns
ns
ns
ns
ns
Switching Time Test Circuit
IB1
1Ω
PW=20μs
100Ω
IB2
24Ω
1μF 1μF
VCE=12V
--2V
IC=10IB1= --10IB2=500mA
(For PNP, the polarity is reversed.)
+12V
IC -- VCE
--1.6
2SB631, 631K
--1.4 Tc=25°C
--1.2
--20mA
--15mA
--1.0 --12mA
--10mA
--0.8 --8mA
--0.6 --6mA
--4mA
--0.4
--2mA
--0.2
0 IB=0
0 --1 --2 --3 --4 --5 --6
Collector-to-Emitter Voltage, VCE – V ITR08276
--1.4
2SB631, 631K
IC -- VBE
--1.2 VCE= --5V
IC -- VCE
1.6
2SD600, 600K
1.4 Tc=25°C
1.2
1.0
2011m52mAmAA
10mA
8mA
0.8 6mA
0.6 4mA
0.4
2mA
0.2
0 IB=0
01 23 45 6
Collector-to-Emitter Voltage, VCE – V ITR08277
1.4
2SD600, 600K
IC -- VBE
1.2 VCE=5V
--1.0
--0.8
1.0
0.8
--0.6 0.6
--0.4 0.4
--0.2
0
0
0.2
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter Voltage, VBE – V ITR08278
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR08279
Rev.0 I Page 2 of 4 I www.onsemi.com


Part Number 2SB631K
Description PNP / NPN Epitaxial Planar Silicon Transistors
Maker ON Semiconductor
Total Page 4 Pages
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