2SB631
2SB631 is PNP / NPN Epitaxial Planar Silicon Transistors manufactured by onsemi.
Features
- High breakdown voltage VCEO 100/120V, High current 1A.
- Low saturation voltage, excellent h FE linearity.
Package Dimensions unit:mm
2009B
[2SB631, 631K/2SD600, 600K]
8.0 4.0
1.5 3.0 7.0
1.6 0.8
( ) : 2SB631, 631K
Specifications
12 3
2.4 4.8
1 : Emitter 2 : Collector 3 : Base SANYO : TO-126
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP
Tj Tstg
Conditions Tc=25˚C
2SB631, D600 (- )100 (- )100
2SB631K, D600K (- )120 (- )120 (- )5 (- )1 (- )2 1 8 150
- 55 to +150
Unit V V V A A W W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Brakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff...
