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2SB631 - PNP / NPN Epitaxial Planar Silicon Transistors

Key Features

  • High breakdown voltage VCEO 100/120V, High current 1A.
  • Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SB631, 631K Specifications 12 3 2.4 4.8 1.2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Co.

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Datasheet Details

Part number 2SB631
Manufacturer onsemi
File Size 94.38 KB
Description PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet download datasheet 2SB631 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SB631, 631K Specifications 12 3 2.4 4.8 1.