| Part Number | 2SB631 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency Power Amplifier Applications
Features
· High breakdown voltage VCEO 100/120V, Hig.
* High breakdown voltage VCEO 100/120V, High current 1A. * Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Param. |
2SB631 Datasheet and Specifications PDF
The 2SB631 is a PNP/NPN Epitaxial Planar Silicon Transistor.
Key Specifications
| Max Operating Temp | 140 °C |
|---|
| Part Number | 2SB631 Datasheet |
|---|---|
| Description | PNP / NPN Epitaxial Planar Silicon Transistors |
| Manufacturer | onsemi |
| Overview |
Ordering number : ENN346G
2SB631, 631K/ 2SD600, 600K
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency
Power Amplifier Applications
Features
· High breakdown voltage VCEO 100.
* High breakdown voltage VCEO 100/120V, High current 1A. * Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SB631, 631K Specifications 12 3 2.4 4.8 1.2 1 : Emi. |
| Part Number | 2SB631 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-126 package ·Complement to type 2SD600/K ·High breakdown voltage VCEO:-100/-120V ·High current: -1A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power ampli. ETER Collector-emitter breakdown voltage 2SB631 IC=-1mA; RBE=@ 2SB631K 2SB631 IC=-10µA ;IE=0 2SB631K IE=-10µA ;IC=0 IC=-0.5A ;IB=-50mA IC=-0.5A ;IB=-50mA VCB=-50V; IE=0 VEB=-4V; IC=0 IC=-50mA ; VCE=-5V IC=-0.5A ; VCE=-5V IC=-50mA ; VCE=-10V f=1MHz ; VCB=-10V CONDITIONS SYMBOL 2SB631 2SB631K MIN -1. |
| Part Number | 2SB631 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD600 ·Minimum Lot-to-Lot variatio. BR)CBO Collector-Base Breakdown Voltage IC= -10μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= -10μA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -50. |