2SC2712GT1G Overview
2SC2712GT1G Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz The 2SC2712GT1G is designed for low to medium frequency applications such as wireless toys. The targeted design enables improved performance versus the industry standard MMBT3904 in some key parametric specifications.
2SC2712GT1G Key Features
- Lower VCE(sat)- Higher Gain (hfe)- Higher Breakdown Voltage Rating- Moisture Sensitivity Level: 1 This is a Pb-Free Devi
- Longer Battery Life
- Improved Performance Through Targeted Design
- Continuous Collector Current
- Peak Base Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) IB Value 60 50 5.0 150 200 30 Unit Vdc Vdc Vdc mAdc mAdc mA
- 55 to +150 Unit mW °C °C
- Rev. 2
- 3.5 10 MHz pF dB Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO ICEO Min 50 60 5.0
- 0.1 0.1 0.1 2.0 1.0 Unit Vdc Vdc Vdc mAdc mA mAdc mAdc mAdc
- 200 VCE(sat)