Inchange Semiconductor 2SC2712
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2712 |
|---|---|
| Datasheet | 2SC2712 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●With SOT-23 packaging●High collector-base voltage
●High power dissipation
●Low saturation voltage
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power amplifier applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.15 A 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2712 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 BVCEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 BVEBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.1A; IB= 0.01A VBE(sat) Base-Emitter Sat...