| Part number | 2SC2712 |
|---|---|
| Datasheet | 2SC2712 Datasheet PDF (Download) |
| File Size | 202.78 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 BVCEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 BVEBO Emitter-Base Breakdown Voltage IE= 0.1mA.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2712 | Silicon NPN Transistor | Toshiba Semiconductor |
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2SC2712 | NPN TRANSISTOR | AiT Semiconductor |
 |
2SC2712 | NPN Silicon Epitaxial Planar Transistor | GME |
