2SC2716 Description
Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V ICBO Collector Cutoff Current VCB= 30V;.
- Part: 2SC2716
- Manufacturer: Inchange Semiconductor
- Size: 70.82 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SC2716 | Silicon NPN TRANSISTOR |
Kexin Semiconductor |
2SC2716 | Silicon NPN Epitaxial Type Transistor |