Datasheet Details
| Part number | 2SC2716 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 70.82 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC2716_InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor.
| Part number | 2SC2716 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 70.82 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC2716_InchangeSemiconductor.pdf |
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·High Power Gain: Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V ICM Collector Current Collector Power Dissipation @TC=25℃ 6 A 20 W PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 1.7 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.datasheet4u.com/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2716 TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2716 | Silicon NPN TRANSISTOR | Toshiba Semiconductor |
 |
2SC2716 | Silicon NPN Epitaxial Type Transistor | Kexin |
| Part Number | Description |
|---|---|
| 2SC2707 | Power Transistor |
| 2SC2734 | Silicon NPN RF Transistor |
| 2SC2735 | Silicon NPN RF Transistor |
| 2SC2736 | Silicon NPN RF Transistor |
| 2SC2738 | Silicon NPN Power Transistors |
| 2SC2759 | Silicon NPN RF Transistor |
| 2SC2233 | Silicon NPN Power Transistor |
| 2SC2242 | Silicon NPN Power Transistor |
| 2SC2247 | Power Transistor |
| 2SC2248 | Power Transistor |