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2SC2716

Manufacturer: Inchange Semiconductor

2SC2716 datasheet by Inchange Semiconductor.

2SC2716 datasheet preview

2SC2716 Datasheet Details

Part number 2SC2716
Datasheet 2SC2716_InchangeSemiconductor.pdf
File Size 70.82 KB
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
2SC2716 page 2

2SC2716 Overview

Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V ICBO Collector Cutoff Current VCB= 30V;.

2SC2716 from other manufacturers

View 2SC2716 datasheet index

Brand Logo Part Number Description Other Manufacturers
Toshiba Semiconductor Logo 2SC2716 Silicon NPN TRANSISTOR Toshiba Semiconductor
Kexin Logo 2SC2716 Silicon NPN Epitaxial Type Transistor Kexin
Inchange Semiconductor logo - Manufacturer

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