Datasheet4U Logo Datasheet4U.com

2SC2716 - Silicon NPN Power Transistor

General Description

High Power Gain: Gp≥12dB,f= 27MHz, PO= 16W High Reliability APPLICATIONS

Designed for RF power amplifier applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC2716 Silicon NPN TRANSISTOR Toshiba Semiconductor
2SC2716 Silicon NPN Epitaxial Type Transistor Kexin
2SC2710 Silicon NPN TRANSISTOR Toshiba Semiconductor
2SC2710 Silicon NPN transistor BLUE ROCKET ELECTRONICS
2SC2712 Silicon NPN Transistor Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC2707 Power Transistor
2SC2734 Silicon NPN RF Transistor
2SC2735 Silicon NPN RF Transistor
2SC2736 Silicon NPN RF Transistor
2SC2738 Silicon NPN Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2716 DESCRIPTION ·High Power Gain: Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V ICM Collector Current Collector Power Dissipation @TC=25℃ 6 A 20 W PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 1.7 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.datasheet4u.