2SC2716 Overview
Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V ICBO Collector Cutoff Current VCB= 30V;.
2SC2716 datasheet by Inchange Semiconductor.
| Part number | 2SC2716 |
|---|---|
| Datasheet | 2SC2716_InchangeSemiconductor.pdf |
| File Size | 70.82 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V ICBO Collector Cutoff Current VCB= 30V;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SC2716 | Silicon NPN TRANSISTOR | Toshiba Semiconductor | |
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