2SC2716 Datasheet and Specifications PDF

The 2SC2716 is a Silicon NPN TRANSISTOR.

Datasheet4U Logo
Part Number2SC2716 Datasheet
ManufacturerToshiba
Overview TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2716 High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications 2SC2716 Unit: mm. , IC = 0 hFE (Note) VCE = 12 V, IC = 2 mA VCE (sat) VBE (sat) fT Cre IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz Cc･rbb’ NF VCE = 10 V, IE = -1 mA, f = 30 MHz VCE = 10 V, IE = -1 mA, f = 1 MHz Rg = 50 W Note: hFE classification R: 40~80, O: .
Part Number2SC2716 Datasheet
DescriptionSilicon NPN Power Transistor
ManufacturerInchange Semiconductor
Overview ·High Power Gain: Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collect. 1 mA ICEO Collector Cutoff Current VCE= 25V; IB= 0 B 0.1 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 mA hFE DC Current Gain IC= 0.5A; VCE= 5V 20 180 PO Output Power VCC= 12V;Pin= 1W, f=27MHz 16 18 W η Power Efficiency 60 70 % isc Website： Free Datashee.
Part Number2SC2716 Datasheet
DescriptionSilicon NPN Epitaxial Type Transistor
ManufacturerKexin Semiconductor
Overview SMD Type Silicon NPN Epitaxial 2SC2716 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low noise figure: NF = 3.5dB (max) (f = 1 MHz). +0.1 1.3-0.1 1 +0.1 0.95-0.1. +0.1 2.4-0.1 Low noise figure: NF = 3.5dB (max) (f = 1 MHz). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Co.