| Part Number | 2SC2712 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | Bipolar Transistors Silicon NPN Epitaxial Type 2SC2712 1. Applications • Low-Frequency Amplifiers • Audio Frequency General Purpose Amplifier Applications • AM Amplifiers 2. Features (1) AEC-Q101 qual. (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = 50 V (3) High collector current: IC = 150 mA (max) (4) High hFE: hFE = 70 to 700 (5) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) (6) Low noise: NF = 1 dB (typ.), 10 dB (max) (7) C. |
2SC2712 Datasheet and Specifications PDF
The 2SC2712 is a Silicon NPN Transistor.
| Part Number | 2SC2712 Datasheet |
|---|---|
| Description | Silicon NPN Transistors |
| Manufacturer | Weitron Technology |
| Overview | 2SC2712 3 1 2 SOT-23 WEITRON 2SC2712 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit . 0.61 M 0.076 0.25 WEITRON . |
| Part Number | 2SC2712 Datasheet |
|---|---|
| Description | NPN Silicon Epitaxial Planar Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview |
Features
High voltage and high current Excellent hFE linearity Complementary to 2SA1162 RoHS compliant with Halogen-free
NPN Silicon Epitaxial Planar Transistor 2SC2712
Mechanical Data
Cas.
* High voltage and high current * Excellent hFE linearity * Complementary to 2SA1162 * RoHS compliant with Halogen-free NPN Silicon Epitaxial Planar Transistor 2SC2712 Mechanical Data * Case: SOT-23 * Molding Compound: UL Flammability Classification Rating 94V-0 * Terminals: Matte tin-plated leads. |
| Part Number | 2SC2712 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·With SOT-23 packaging ·High collector-base voltage ·High power dissipation ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Po. C= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.1A; IB= 0.01A VBE(sat) Base-Emitter Saturation Voltage IC= 0.1A; IB= 0.01A ICBO Collector Cutoff Current VCB= 60V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 2mA ; VCE= 6V 2SC2712 MIN TYP. MAX UNIT . |