SeCoS Halbleitertechnologie GmbH 2SC2712
NPN Transistor
| Part No. | 2SC2712 |
|---|---|
| Datasheet | 2SC2712 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
*Power Dissipation PCM: 150 mW (Tamb=25 oC) *Collector Current ICM: 150 mA *Collector-Base Voltage V(BR)CBO: 60 V *Operating and Storage Junction Temperature Range TJ,TSTG: -55~+150 C *RoHS Compliant Product o 1 3 3 Collector Base Dim A B Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 1 2 Emitter C D G A L B S H J K L S V C 2 Top View G V All Dimension in mm K J D HELECTRICAL CHARACTERISTICS
(Tamb=25oC Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Output capacitance Noise Figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob NF unless otherwise specified) Test conditions MIN 60 50 5 0.1 0.1 70 0.1 80 2.0 1.0 3.5 10 700 0.25 V MHz pF dB TYP MAX UNIT V V V µA µA Ic= 100µA , IE=0 IC=1mA...
