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2SC2712 - NPN Transistor

Key Features

  • Power Dissipation PCM: 150 mW (Tamb=25 oC).
  • Collector Current ICM: 150 mA.
  • Collector-Base Voltage V(BR)CBO: 60 V.
  • Operating and Storage Junction Temperature Range TJ,TSTG: -55~+150 C.
  • RoHS Compliant Product o 1 3 3 Collector Base Dim A B Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 1 2 Emitter C D G A L B S H J K L S V C 2 Top View G V All Dimension in mm K J D H E.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC2712 Elektronische Bauelemente NPN Silicon General Purpose Transistor A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES *Power Dissipation PCM: 150 mW (Tamb=25 oC) *Collector Current ICM: 150 mA *Collector-Base Voltage V(BR)CBO: 60 V *Operating and Storage Junction Temperature Range TJ,TSTG: -55~+150 C *RoHS Compliant Product o 1 3 3 Collector Base Dim A B Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.