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2SC2712 - Silicon NPN Transistor

Key Features

  • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low noise: NF = 1dB (typ. ), 10dB (max) 0.55 High hFE: hFE = 70 700 +0.1 1.3-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ. ) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Transistors Unit: mm Features High voltage and high current: VCEO = 50 V, IC = 150 mA (max) +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low noise: NF = 1dB (typ.), 10dB (max) 0.55 High hFE: hFE = 70 700 +0.1 1.3-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.