Kexin Electronics 2SC2712
Silicon NPN Transistor
FEATURES
High voltage and high current: VCEO = 50 V, IC = 150 mA (max) +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low noise: NF = 1dB (typ.), 10dB (max) 0.55 High hFE: hFE = 70 700 +0.1 1.3-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 150 30 150 125 -55 to +125 Unit V V V mA mA mWELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Noise figure Transition frequency Symbol ICBO IEBO hFE Testconditons VCB = 60 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2 mA 70 0.1 2 1 80 Min...