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2SD1618 - Bipolar Transistor

Features

  • Low collector-to-emitter saturation voltage.
  • Very small size making it easy to provide highdensity, small-sized hybrid IC’s Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm).

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Datasheet Details

Part number 2SD1618
Manufacturer onsemi
File Size 177.93 KB
Description Bipolar Transistor
Datasheet download datasheet 2SD1618 Datasheet
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Full PDF Text Transcription

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Ordering number : EN1784C 2SD1618 Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single PCP http://onsemi.com Features • Low collector-to-emitter saturation voltage • Very small size making it easy to provide highdensity, small-sized hybrid IC’s Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings 20 15 5 0.7 1.5 500 1.3 150 --55 to +150 Unit V V V A A mW W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
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