4N35M
4N35M is Phototransistor Optocouplers manufactured by onsemi.
Description
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic 6- pin dual- in- line package.
Features
- Minimum Current Transfer Ratio at IF = 10 m A, VCE = 10 V:
- 10% for 4N27M and 4N28M
- 20% for 4N25M and 4N26M
- 100% for 4N35M and 4N36M and 4N37M
- Safety and Regulatory Approvals:
- UL1577, 4,170 VACRMS for 1 Minute
- DIN- EN/IEC60747- 5- 5, 850 V Peak Working Insulation Voltage
Applications
- Power Supply Regulators
- Digital Logic Inputs
- Microprocessor Inputs
DATA SHEET .onsemi.
6 1
6 1
PDIP6 CASE 646BX
PDIP6 S SUFFIX CASE 646BY
6 1
PDIP6 T SUFFIX CASE 646BZ
MARKING DIAGRAM
ON 4N25 VXYYQ
ON 4N25 V
X YY Q
= Logo = Specific Device Code = DIN EN/IEC60747- 5- 5 Option (only appears on ponent ordered with this option) = One- Digit Year Code = Digit Work Week = Assembly Package Code
SCHEMATIC
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of this data sheet.
© Semiconductor ponents Industries, LLC, 2005
September, 2021
- Rev. 2
Publication Order Number:...
