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AFGB30T65SQDN ON Semiconductor (https://www.onsemi.com/) IGBT

Title Transistor IGBT N-CH 650V 60A 3-Pin D2PAK T/R (Alt: AFGB30T65SQDN-BW)
Description AFGB30T65SQDN IGBT for Automotive Applications 650 V, 30 A, D2PAK Features • Maximum Junction Temperature: TJ = 175°C • High Speed Switching Series • VCE(sat) = 1.6 V (typ.) @ IC = 30 A • Low VF Soft Recovery Co−packaged Diode • AEC−Q101 Qualified • 100% of the Parts are Dynamically Tested (Note 1) Typical Applications • Automotive On Board Charger • Automotive DC/DC Converter for HEV MAXIMUM R...
Features
• Maximum Junction Temperature: TJ = 175°C
• High Speed Switching Series
• VCE(sat) = 1.6 V (typ.) @ IC = 30 A
• Low VF Soft Recovery Co−packaged Diode
• AEC−Q101 Qualified
• 100% of the Parts are Dynamically Tested (Note 1) Typical Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for HEV MAXIMUM RATINGS (TC = 25°C unless ot...

Datasheet PDF File AFGB30T65SQDN Datasheet - 225.55KB
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AFGB30T65SQDN   AFGB30T65SQDN   AFGB30T65SQDN  



AFGB30T65SQDN Distributor

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Avnet Asia
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Mouser Electronics
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1 units: 4.52 USD
10 units: 3.8 USD
25 units: 3.59 USD
100 units: 3.07 USD
250 units: 2.9 USD
500 units: 2.73 USD
800 units: 2.34 USD
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Avnet Americas
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6400 units: 2.26849 USD
4800 units: 2.3362 USD
3200 units: 2.40392 USD
1600 units: 2.47163 USD
800 units: 2.53935 USD
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Avnet Silica
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EBV Elektronik
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