• Part: AFGB30T65SQDN
  • Description: IGBT
  • Manufacturer: onsemi
  • Size: 226.78 KB
AFGB30T65SQDN Datasheet (PDF) Download
onsemi
AFGB30T65SQDN

Key Features

  • Maximum Junction Temperature: TJ = 175°C
  • High Speed Switching Series
  • VCE(sat) = 1.6 V (typ.) @ IC = 30 A
  • Low VF Soft Recovery Co−packaged Diode
  • AEC−Q101 Qualified
  • 100% of the Parts are Dynamically Tested (Note 1)

Applications

  • Automotive On Board Charger