AFGB30T65SQDN igbt equivalent, igbt.
* Maximum Junction Temperature: TJ = 175°C
* High Speed Switching Series
* VCE(sat) = 1.6 V (typ.) @ IC = 30 A
* Low VF Soft Recovery Co−packaged Diode
650 V, 30 A, D2PAK
Features
* Maximum Junction Temperature: TJ = 175°C
* High Speed Switching Series
* VCE(.
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