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AFGB30T65SQDN - IGBT

Key Features

  • Maximum Junction Temperature: TJ = 175°C.
  • High Speed Switching Series.
  • VCE(sat) = 1.6 V (typ. ) @ IC = 30 A.
  • Low VF Soft Recovery Co.
  • packaged Diode.
  • AEC.
  • Q101 Qualified.
  • 100% of the Parts are Dynamically Tested (Note 1) Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT for Automotive Applications 650 V, 30 A, D2PAK AFGB30T65SQDN Features • Maximum Junction Temperature: TJ = 175°C • High Speed Switching Series • VCE(sat) = 1.6 V (typ.