AFGB30T65SQDN Datasheet, ON Semiconductor

AFGB30T65SQDN igbt equivalent, igbt.

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Features and benefits

* Maximum Junction Temperature: TJ = 175°C
* High Speed Switching Series
* VCE(sat) = 1.6 V (typ.) @ IC = 30 A
* Low VF Soft Recovery Co−packaged Diode

Application

650 V, 30 A, D2PAK Features
* Maximum Junction Temperature: TJ = 175°C
* High Speed Switching Series
* VCE(.

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