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AFGB40T65RQDN - IGBT

Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Coefficient for Easy Parallel Operation.
  • High Current Capability.
  • Low Saturation Voltage: VCE(Sat) = 1.55 V (Typ. ) @ IC = 40 A.
  • 100% of the Parts Tested for ILM (Note 2).
  • High Input Impedance.
  • Fast Switching.
  • Tightened Parameter Distribution.
  • This Device is Pb.
  • Free and RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT for Automotive Applications 650 V, 40 A AFGB40T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Coefficient for Easy Parallel Operation • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.55 V (Typ.) @ IC = 40 A • 100% of the Parts Tested for ILM (Note 2) • High Input Impedance • Fast Switching • Tightened Parameter Distribution • This Device is Pb−Free and RoHS Compliant Typical Applications • E−compressor for HEV/EV • PTC Heater for HEV/EV DATA SHEET www.onsemi.com BVCES 650 V VCE(sat) TYP 1.
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