AFGB40T65SQDN - IGBT

Datasheet Summary

Features

Maximum Junction Temperature: TJ = 175°C.
High Speed Switching Series.
VCE(sat) = 1.6 V (Typ. ) @ IC = 40 A.
100% of the Part are Dynamically Tested (Note 1).
AEC.
Q101 Qualified.
These Devices are Pb.
Free and are RoHS Compliant Typical.

ON Semiconductor

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Datasheet Details

Part number	AFGB40T65SQDN
Manufacturer	ON Semiconductor
File Size	267.23 KB
Description	IGBT
Datasheet	AFGB40T65SQDN Datasheet
Additional preview pages of the AFGB40T65SQDN datasheet.

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AFGB40T65SQDN IGBT for Automotive Applications, 650 V, 40 A, D2PAK Features • Maximum Junction Temperature: TJ = 175°C • High Speed Switching Series • VCE(sat) = 1.6 V (Typ.

Published: Oct 3, 2022 |