* AEC
* Q101 Qualified
* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A
* 100% of the Parts
AFGHL75T65SQDT Datasheet (339.06 KB)
AFGHL75T65SQDT
339.06 KB
Igbt.
Field Stop Trench IGBT 650 V, 75 A AFGHL75T65SQDT Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL7.
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