Datasheet4U Logo Datasheet4U.com

AFGHL75T65SQ - IGBT

Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ. ) @ IC = 75 A.
  • 100% of the Parts are Tested for ILM (Note 2).
  • Fast Switching.
  • Tight Parameter Distribution.
  • AEC.
  • Q101 Qualified and PPAP Capable Typical.

📥 Download Datasheet

Datasheet preview – AFGHL75T65SQ

📁 Similar Datasheet

Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Field Stop Trench IGBT 650 V, 75 A, TO247 AFGHL75T65SQ Using the novel field stop 4th generation IGBT technology, AFGHL75T65SQ offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, which does not require reverse recovery specification. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.
Published: |