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AFGHL75T65SQDT - IGBT

Features

  • AEC.
  • Q101 Qualified.
  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ. ) @ IC = 75 A.
  • 100% of the Parts are Tested for ILM (Note 2).
  • Fast Switching.
  • Tight Parameter Distribution.
  • RoHS Compliant Typical.

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Full PDF Text Transcription

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Field Stop Trench IGBT 650 V, 75 A AFGHL75T65SQDT Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL75T65SQDT offers the optimum performance with both low conduction and switching losses for a high efficiency operation in various applications, especially totem pole bridgeless PFC and DCDC block as well. Features • AEC−Q101 Qualified • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.
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