AFGHL75T65SQDT Description
Field Stop Trench IGBT 650 V, 75 A AFGHL75T65SQDT Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL75T65SQDT offers the optimum performance with both low conduction and switching losses for a high efficiency operation in various applications, especially totem pole bridgeless PFC and DCDC block as well.
AFGHL75T65SQDT Key Features
- AEC-Q101 Qualified
- Maximum Junction Temperature: TJ = 175C
- Positive Temperature Co-efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A
- 100% of the Parts are Tested for ILM (Note 2)
- Fast Switching
- Tight Parameter Distribution
- RoHS pliant