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  ON Semiconductor Electronic Components Datasheet  

ATP304 Datasheet

P-Channel Power MOSFET

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ATP304 pdf
Ordering number : ENA2192
ATP304
P-Channel Power MOSFET
-60V, -100A, 6.5m, ATPAK
http://onsemi.com
Features
On-resistance RDS(on)1=5.0m(typ.)
Input Capacitance Ciss=13000pF(typ.)
4.5V drive
Halogen Free compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
ID
IDP PW10μs, duty cycle1%
PD Tc=25°C
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note : *1 VDD=-36V, L=100μH, IAV=-75A
*2 L100μH, Single pulse
Ratings
-60
±20
-100
-400
90
150
- 55 to +150
656
-75
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
ATP304-TL-H
Ordering & Package Information
Device
ATP304-TL-H
Package
ATPAK
Shipping
3,000
pcs. / reel
note
Pb-Free
and
Halogen-Free
6.5
1.5
Packing Type: TL
Marking
4.6
2.6
0.4 0.4
4
ATP304
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
Semiconductor Components Industries, LLC, 2013
June, 2013
1: Gate
2: Drain
3: Source
4: Drain
ATPAK
Electrical Connection
2,4
1
3
60513 TKIM TC-00002952 No.A2192-1/6


  ON Semiconductor Electronic Components Datasheet  

ATP304 Datasheet

P-Channel Power MOSFET

No Preview Available !

ATP304 pdf
Electrical Characteristics at Ta = 25°C
ATP304
Parameter
Symbol
Conditions
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Reverse Recoverry Time
Reverse Recoverry Charge
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID=-1mA, VGS=0V
VDS=-60V, VGS=0V
VGS=±16V, VDS=0V
VDS=-10V, ID=-1mA
VDS=-10V, ID=-50A
ID=-50A, VGS=-10V
ID=-50A, VGS=-4.5V
VDS=-20V, f=1MHz
See Fig.2
VDS=-36V, VGS=-10V, ID=-100A
IS=-100A, VGS=0V
See Fig.3
IS=-100A, VGS= 0V, di/dt=--100A/μs
min
-60
Ratings
typ
-1.2
100
5.0
6.4
13000
1080
760
80
650
780
460
250
55
50
-1.0
90
245
max
-10
±10
-2.6
6.5
8.9
-1.5
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Fig.1 Unclamped Inductive Switching Test Circuit
Fig.2 Switching Time Test Circuit
Fig.3 Reverse Recovery Time Test Circuit
ATP304
G
D
S
L
VDD
Driver MOSFET
No.A2192-2/6


Part Number ATP304
Description P-Channel Power MOSFET
Maker ON Semiconductor
Total Page 6 Pages
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