ATP302 - P-Channel Power MOSFET

Features

ON-resistance RDS(on)1=10mΩ (typ. ).
4.5V drive.
Input capacitance Ciss=5400pF (typ. ).
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VD.

ON Semiconductor

Datasheet Details

Part number	ATP302
Manufacturer	ON Semiconductor
File Size	261.18 KB
Description	P-Channel Power MOSFET
Datasheet	ATP302 Datasheet
Additional preview pages of the ATP302 datasheet.

📁 Similar Datasheet

ATP302 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
ATP301 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
ATP350G01 - Standard LCD (Kentec Electronics)
ATP-SM - Standard Crystals (CTS Corporation)
ATP0574-1 - SPECIFICATIONS FOR STANDARD RESISITIVE TOUCH PANEL (AZ Displays)
ATP0644-3 - SPECIFICATIONS FOR STANDARD RESISITIVE TOUCH PANEL (AZ Displays)
ATP102 - General-Purpose Switching Device Applications (Sanyo Semicon Device)
ATP103 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
ATP104 - General-Purpose Switching Device Applications (Sanyo Semicon Device)
ATP106 - P-Channel Silicon MOSFET (Sanyo Semicon Device)

Other Datasheets by ON Semiconductor

ATP301 - P-Channel Power MOSFET
ATP304 - P-Channel Power MOSFET
ATP101 - P-Channel Power MOSFET
ATP103 - P-Channel Power MOSFET
ATP104 - P-Channel Power MOSFET
ATP106 - P-Channel Power MOSFET
ATP107 - P-Channel Power MOSFET
ATP108 - P-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text

Ordering number : ENA1654A ATP302 P-Channel Power MOSFET –60V, –70A, 13mΩ, ATPAK http://onsemi.com Features • ON-resistance RDS(on)1=10mΩ (typ.) • 4.5V drive • Input capacitance Ciss=5400pF (typ.

Published: Nov 6, 2015 |