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MOSFET – Power, P-Channel
-60 V, 6.5 mW, -100 A
ATP304
Features
• ON−Resistance RDS(on)1 = 5.0 mW (typ) • Input Capacitance Ciss = 13000 pF (typ) • 4.5 V Drive • This Device is Pb−Free, Halogen Free and RoHS Compliant
MAXIMUM RATINGS (Ta = 25°C) (Note 1)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current (DC)
Drain Current (Pulse) PW ≤ 10 ms, duty cycle ≤ 1%
VDSS
−60
V
VGSS
±20
V
ID
−100
A
IDP
−400
A
Allowable Power Dissipation Tc = 25°C
PD
90
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
Avalanche Energy (Single Pulse) (Note 1) EAS
656
mJ
Avalanche Current (Note 2)
IAV
−75
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device.
ATP304 Datasheet
