ATP301 - P-Channel Power MOSFET

Features

ON-resistance RDS(on)=57mΩ (typ. ).
10V drive.
Input capacitance Ciss=4000pF (typ. ).
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VDD=.

ON Semiconductor

Datasheet Details

Part number	ATP301
Manufacturer	ON Semiconductor
File Size	259.99 KB
Description	P-Channel Power MOSFET
Datasheet	ATP301 Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1457A ATP301 P-Channel Power MOSFET –100V, –28A, 75mΩ, ATPAK http://onsemi.com Features • ON-resistance RDS(on)=57mΩ (typ.) • 10V drive • Input capacitance Ciss=4000pF (typ.

Published: Nov 6, 2015 |