ATP301 - P-Channel Power MOSFET

Product Overview

ON Semiconductor

Part number	ATP301
Manufacturer	ON Semiconductor
File Size	259.99 KB
Description	P-Channel Power MOSFET
Datasheet	ATP301 Datasheet
Additional preview pages of the ATP301 datasheet.

ON-resistance RDS(on)=57mΩ (typ. ).
10V drive.
Input capacitance Ciss=4000pF (typ. ).
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VDD=.

📁 Similar Datasheet

ATP301 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
ATP302 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
ATP350G01 - Standard LCD (Kentec Electronics)
ATP-SM - Standard Crystals (CTS Corporation)
ATP0574-1 - SPECIFICATIONS FOR STANDARD RESISITIVE TOUCH PANEL (AZ Displays)
ATP0644-3 - SPECIFICATIONS FOR STANDARD RESISITIVE TOUCH PANEL (AZ Displays)
ATP102 - General-Purpose Switching Device Applications (Sanyo Semicon Device)
ATP103 - P-Channel Silicon MOSFET (Sanyo Semicon Device)

Other Datasheets by ON Semiconductor

Published: Nov 6, 2015 |