BAS16TT1 Datasheet - ON Semiconductor

BAS16TT1 Silicon Switching Diode

BAS16TT1 Advance Information Silicon Switching Diode http://onsemi.com MAXIMUM RATINGS (TA = 25°C) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol VR IF IFM(surge) Max 75 200 500 Unit V mA mA 3 CATHODE 1 ANODE Preferred Device THERMAL CHARACTERISTICS Characteristic Total Power Dissipation, TA = 25°C (1) 3 Symbol PD TJ, Tstg RθJA Max 150 55 to +150 833 Unit mW °C °C/W 2 1 CASE 463 SOT 416/SC 75 STY.

BAS16TT1 Features

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BAS16TT1_ONSemiconductor.pdf