Datasheet4U Logo Datasheet4U.com

BAS16WT1G - Silicon Switching Diode

Description

SC 70 (SOT

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Features

  • S and NSV Prefix for Automotive and Other.

📥 Download Datasheet

Datasheet preview – BAS16WT1G

Datasheet Details

Part number BAS16WT1G
Manufacturer onsemi
File Size 167.39 KB
Description Silicon Switching Diode
Datasheet download datasheet BAS16WT1G Datasheet
Additional preview pages of the BAS16WT1G datasheet.

📁 Similar Datasheet

  • BAS16WT1 - Silicon Switching Diode (Motorola Inc)
  • BAS16WT - Switching Diode (MCC)
  • BAS16WT - Three Terminals Surface Mount Switching Diode (TAITRON)
  • BAS16W - Small Signal Switching Diode (SeCoS)
  • BAS16W - Fast Switching Surface Mount Si-Planar Diodes (Diotec)
  • BAS16W - SURFACE MOUNT FAST SWITCHING DIODE (Diodes Incorporated)
  • BAS16W - High-speed switching diodes (NXP)
  • BAS16W - SURFACE MOUNT FAST SWITCHING DIODE (Won-Top Electronics)
  • BAS16W - Silicon Switching Diode (Infineon)
  • BAS16W - 350mW High Speed Switching Diode (MCC)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Silicon Switching Diode BAS16WT1G Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant DATA SHEET www.onsemi.com SC−70 CASE 419 STYLE 2 3 CATHODE 1 ANODE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms VR 100 V IR 200 mA IFM(surge) 500 mA Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) PD 200 mW 1.
Published: |