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  ON Semiconductor Electronic Components Datasheet  

BAS16WT1G Datasheet

Silicon Switching Diode

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BAS16WT1G
Silicon Switching Diode
Features
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
3
CATHODE
1
ANODE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 ms
VR
IR
IFM(surge)
100
200
500
V
mA
mA
Total Power Dissipation,
One Diode Loaded TA = 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
PD 200 mW
1.6 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Symbol
RqJA
Max
625
Unit
°C/W
MARKING
DIAGRAM
SC−70
CASE 419
STYLE 2
A6 MG
G
1
A6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BAS16WT1G
SBAS16WT1G
SC−70 3000 / Tape & Reel
(Pb−Free)
SC−70 3000 / Tape & Reel
(Pb−Free)
NSVBAS16WT3G SC−70
(Pb−Free)
10000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
March, 2014− Rev. 11
1
Publication Order Number:
BAS16WT1/D


  ON Semiconductor Electronic Components Datasheet  

BAS16WT1G Datasheet

Silicon Switching Diode

No Preview Available !

BAS16WT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
Reverse Current
(VR = 100 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 W) (Figure 1)
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2)
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
Symbol
VF
IR
CD
trr
QS
VFR
Min
Max
715
866
1000
1250
1.0
50
30
2.0
6.0
45
1.75
Unit
mV
mA
pF
ns
PC
V
http://onsemi.com
2


Part Number BAS16WT1G
Description Silicon Switching Diode
Maker ON Semiconductor
Total Page 5 Pages
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