• Part: BC327
  • Description: PNP Epitaxial Silicon Transistor
  • Category: Transistor
  • Manufacturer: onsemi
  • Size: 203.79 KB
Download BC327 Datasheet PDF
onsemi
BC327
Features - Switching and Amplifier Applications - Suitable for AF- Driver Stages and Low- Power Output Stages - plement to BC337/BC338 - These are Pb- Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted.) Symbol Parameter Value Unit VCES Collector- Emitter Voltage - 50 VCEO Collector- Emitter Voltage - 45 VEBO Emitter- Base Voltage - 5 Collector Current (DC) - 800 m A Junction Temperature C TSTG Storage Temperature - 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25C unless otherwise noted.) (Note 1) Symbol Characteristic Value Unit Power Dissipation Derate Above 25C 625 m W 5.0 m...
BC327 reference image

Representative BC327 image (package may vary by manufacturer)