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BC327. For precise diagrams, and layout, please refer to the original PDF.
PNP Epitaxial Silicon Transistor BC327 Features Switching and Amplifier Applications Suitable for AF−Driver Stages and Low−Power Output Stages Complement to BC337/B...
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r AF−Driver Stages and Low−Power Output Stages Complement to BC337/BC338 These are Pb−Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted.) Symbol Parameter Value Unit VCES Collector−Emitter Voltage −50 V VCEO Collector−Emitter Voltage −45 V VEBO Emitter−Base Voltage −5 V IC Collector Current (DC) −800 mA TJ Junction Temperature 150 C TSTG Storage Temperature −55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
BC327 Datasheet
