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BC556 - PNP Epitaxial Silicon Transistor

This page provides the datasheet information for the BC556, a member of the BC559 PNP Epitaxial Silicon Transistor family.

Datasheet Summary

Features

  • Switching and Amplifier.
  • High.
  • Voltage: BC556, VCEO =.
  • 65 V.
  • Low.
  • Noise: BC559, BC560.
  • Complement to BC546, BC547, BC548, BC549, and BC550.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet preview – BC556

Datasheet Details

Part number BC556
Manufacturer ON Semiconductor
File Size 247.16 KB
Description PNP Epitaxial Silicon Transistor
Datasheet download datasheet BC556 Datasheet
Additional preview pages of the BC556 datasheet.

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Other Datasheets by ON Semiconductor
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Full PDF Text Transcription

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PNP Epitaxial Silicon Transistor BC556, BC557, BC558, BC559, BC560 Features • Switching and Amplifier • High−Voltage: BC556, VCEO = −65 V • Low−Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector - Base Voltage VCBO V BC556 −80 BC557 / BC560 −50 BC558 / BC559 −30 Collector - Emitter Voltage VCEO V BC556 −65 BC557 / BC560 −45 BC558 / BC559 −30 Emitter - Base Voltage VEBO −5 V Collector Current (DC) IC −100 mA Peak Collector Current (Pulse) ICP −200 mA Peak Base Current (Pulse) IBP −200 mA Junction Temperature TJ 150 °C Storage Temperature Range TSTG −65 to
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