BS107 Overview
250 mAMPS 200 VOLTS RDS(on) = 14 Ω (BS107) RDS(on) = 6.4 Ω (BS107A) N Channel D 1. The Power Dissipation of the package may result in a lower continuous drain current. Pulse Width v 300 µs, Duty Cycle v 2.0%.
| Part number | BS107 |
|---|---|
| Datasheet | BS107 / BS107A Datasheet PDF (Download) |
| File Size | 57.07 KB |
| Manufacturer | onsemi |
| Description | Small Signal MOSFET |
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250 mAMPS 200 VOLTS RDS(on) = 14 Ω (BS107) RDS(on) = 6.4 Ω (BS107A) N Channel D 1. The Power Dissipation of the package may result in a lower continuous drain current. Pulse Width v 300 µs, Duty Cycle v 2.0%.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BS107 | TMOS Switching(N-Channel-Enhancement) | Motorola Inc |
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BS107 | N-channel enhancement mode vertical D-MOS transistor | NXP |
| BS107 | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) | Siemens Semiconductor Group |