BS107
BS107 is TMOS Switching(N-Channel-Enhancement) manufactured by Motorola Semiconductor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BS107/D
TMOS Switching
N- Channel
- Enhancement
2 GATE
1 DRAIN
BS107 BS107A
®
3 SOURCE
MAXIMUM RATINGS
Rating Drain
- Source Voltage Gate- Source Voltage
- Continuous
- Non- repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID IDM PD TJ, Tstg Value 200 ± 20 ± 30 250 500 350
- 55 to 150 m W °C Unit Vdc Vdc Vpk m Adc
1 2 3
CASE 29- 04, STYLE 30 TO- 92 (TO- 226AA)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Zero- Gate- Voltage Drain Current (VDS = 130 Vdc, VGS = 0) Drain- Source Breakdown Voltage (VGS = 0, ID = 100 µAdc) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IDSS V(BR)DSX IGSS VGS(Th) r DS(on)
- -
- -
- - 4.5 4.8 28 14 6.0 6.4
- 200
- -
- 0.01 30
- 10 n Adc Vdc n...
