BS107 Overview
The Power Dissipation of the package may result in a lower continuous drain current. Pulse Width 300 µs, Duty Cycle 2.0%. v v REV 1 Motorola Small Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.
Tmos Switching(n-channel-enhancement)
| Part number | BS107 |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 76.19 KB |
| Description | TMOS Switching(N-Channel-Enhancement) |
| Datasheet | BS107_MotorolaInc.pdf |
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The Power Dissipation of the package may result in a lower continuous drain current. Pulse Width 300 µs, Duty Cycle 2.0%. v v REV 1 Motorola Small Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BS107 | N-channel enhancement mode vertical D-MOS transistor | NXP |
| BS107 | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) | Siemens Semiconductor Group | |
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BS107 | N-CHANNEL ENHANCEMENT MODE TRANSISTOR | Diodes Incorporated |
| BS107 | N-Channel 200-V (D-S) MOSFETs | Vishay Siliconix | |
| BS107 | Small Signal MOSFET | ON Semiconductor |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| BS107A | N-Channel MOSFET |
| BS108 | 200 VOLTS N-CHANNEL TMOS |
| BS170 | N-channel MOSFET |