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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BS107/D
TMOS Switching
N–Channel — Enhancement
2 GATE
1 DRAIN
BS107 BS107A
®
3 SOURCE
MAXIMUM RATINGS
Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID IDM PD TJ, Tstg Value 200 ± 20 ± 30 250 500 350 – 55 to 150 mW °C Unit Vdc Vdc Vpk mAdc
1 2 3
CASE 29–04, STYLE 30 TO–92 (TO–226AA)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Zero–Gate–Voltage Drain Current (VDS = 130 Vdc, VGS = 0) Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc) Ga
BS107 Datasheet
