BS107
BS107 is N-CHANNEL ENHANCEMENT MODE TRANSISTOR manufactured by Diodes Incorporated.
N- CHANNEL ENHANCEMENT MODE TRANSISTOR Features
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- - High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets
TO-92
Dim A B
Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14
Max 4.70 4.70
- 0.63 3.68 2.67 1.40
Mechanical Data
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- - Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Weight: 0.18 grams (approx.)
@ TA = 25°C unless otherwise specified Symbol VDSS VDGS VGS ID Pd Tj, TSTG
BOTTOM VIEW
C D E G H
SG D
All Dimensions in mm
Maximum Ratings
Drain-Source-Voltage Drain-Gate-Voltage
Characteristic
Value 200 200 ±20 120 830 -55 to +150
Unit V V V m A m W °C
Gate-Source-Voltage (pulsed) (Note 2) Drain-Current (continuous) Power Dissipation @TC = 25°C (Note 1) Operating and Storage Temperature Range
Inverse Diode
@ TA = 25°C unless otherwise specified Characteristic Symbol IF VF @ TA = 25°C unless otherwise specified Symbol V(BR)DSS IGSS IDSS IDSX VGS(th) r DS(ON) Rq JA Ciss Coss Crss ton toff Min 200
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- Typ 230
- - 1.8 18
- 58 8.0 1.5 5.0 15...
