Datasheet4U Logo Datasheet4U.com

BS107 - N-CHANNEL ENHANCEMENT MODE TRANSISTOR

Key Features

  • High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B Dim A B Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70.
  • 0.63 3.68 2.67 1.40 Mechanical Data.
  • Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Weight: 0.18 grams (approx. ) @ TA = 25°C unless otherwise specified Symbol VDSS VDGS VGS ID Pd Tj, TSTG D BOTTOM VIEW C C D E G.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BS107 TMOS Switching(N-Channel-Enhancement) Motorola Inc
BS107 N-channel enhancement mode vertical D-MOS transistor NXP
BS107 SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) Siemens Semiconductor Group
BS107 N-Channel 200-V (D-S) MOSFETs Vishay Siliconix
BS107 Small Signal MOSFET ON Semiconductor

Other Datasheets by Diodes Incorporated

Part Number Description
BS170 N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B Dim A B Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 — 0.63 3.68 2.67 1.40 Mechanical Data · · · · Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Weight: 0.18 grams (approx.