The BS107 is a Small Signal MOSFET.
| Package | TO-92-3 |
|---|---|
| Mount Type | Through Hole |
| Max Operating Temp | 200 °C |
| Min Operating Temp | -55 °C |
| Part Number | BS107 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
BS107, BS107A
Preferred Device
Small Signal MOSFET 250 mAmps, 200 Volts
N–Channel TO–92
MAXIMUM RATINGS
Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–repetit.
vices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 * Rev. 2 Publication Order Number: BS107/D DataSheet 4 U .com BS107, BS107A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) . |
| Part Number | BS107 Datasheet |
|---|---|
| Description | N-CHANNEL ENHANCEMENT MODE TRANSISTOR |
| Manufacturer | Diodes Incorporated |
| Overview |
BS107
N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features
· · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets
E
A
TO-92
B
Dim A B
Min 4.45 4.4.
* * * * High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B Dim A B Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 * 0.63 3.68 2.67 1.40 Mechanical Data * * * * Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 20. |
| Part Number | BS107 Datasheet |
|---|---|
| Description | N-Channel 200-V (D-S) MOSFETs |
| Manufacturer | Vishay |
| Overview | VN2010L/BS107 Vishay Siliconix N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN2010L BS107 200 V(BR)DSS Min (V) rDS(on) Max (W) 10 @ VGS = 4.5 V 28 @ VGS = 2.8 V VGS(th) (V) 0.8 to 1.. ESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature.. |
| Part Number | BS107 Datasheet |
|---|---|
| Description | N-channel enhancement mode vertical D-MOS transistor |
| Manufacturer | NXP Semiconductors |
| Overview |
N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line tr.
* Direct interface to C-MOS, TTL, etc. * High-speed switching * No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line tr. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Avnet | 10000 | 2000+ : 0.24938 USD 4000+ : 0.23892 USD 8000+ : 0.2375 USD 16000+ : 0.23637 USD |
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| Newark | 1303 | 1+ : 1.38 USD 10+ : 0.785 USD 25+ : 0.708 USD 50+ : 0.63 USD |
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| Arrow Electronics | 2000 | 2000+ : 0.3046 USD | View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| BS107A | onsemi | Small Signal MOSFET |
| BS107KL | Vishay | N-Channel 240 -V (D-S) MOSFET |
| BS107A | NXP Semiconductors | N-channel enhancement mode vertical D-MOS transistor |
| BS107A | Motorola Semiconductor | N-Channel MOSFET |
| BS107 | Siemens Semiconductor Group | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) |
| BS107P | Diodes Incorporated | 200V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET |
| BS107 | TEMIC Semiconductors | N-Channel Enhancement-Mode MOS Transistors |