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BS107P - 200V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET

Key Features

  • BVDSS > 200V.
  • RDS(ON) ≤ 23Ω @ VGS= 2.6V.
  • ID = 120mA Maximum Continuous Drain Current.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription for BS107P (Reference)

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BS107P 200V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET Features  BVDSS > 200V  RDS(ON) ≤ 23Ω @ VGS= 2.6V  ID = 120mA Maximum Continuous Drain Current  Totally Lead-F...

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S= 2.6V  ID = 120mA Maximum Continuous Drain Current  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.  This part is qualified to JEDEC standards (as references in AEC-Q101) for High Reliability.  https://www.diodes.