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BS107 - N-channel enhancement mode vertical D-MOS transistor

Datasheet Summary

Description

N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope.

Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.

Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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Datasheet preview – BS107

Datasheet Details

Part number BS107
Manufacturer NXP
File Size 65.10 KB
Description N-channel enhancement mode vertical D-MOS transistor
Datasheet download datasheet BS107 Datasheet
Additional preview pages of the BS107 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - TO-92 variant PIN 1 2 3 gate drain DESCRIPTION source Fig.1 Simplified outline and symbol.
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