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BS108 - N-channel enhancement mode vertical D-MOS transistor

Description

N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.

Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown.

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Datasheet preview – BS108

Datasheet Details

Part number BS108
Manufacturer NXP
File Size 56.78 KB
Description N-channel enhancement mode vertical D-MOS transistor
Datasheet download datasheet BS108 Datasheet
Additional preview pages of the BS108 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BS108 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
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