BS108 Datasheet | NXP Semiconductors

FEATURES - Direct interface to C-MOS, TTL, etc. - High-speed switching - No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING PIN 1 2 3 gate drain DESCRIPTION source QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage DC drain current drain-source on-resistance gate-source threshold voltage MAX. 200 250 8 1.8 UNIT V m A Ω V handbook, 2 columns handbook, halfpage d 2 3 g MSB033 MBB076 - 1 s Fig.1 Simplified outline (TO-92) and symbol. April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS ±VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current peak drain current total power dissipation storage temperature range junction temperature up to Tamb = 25 °C (note 1) open drain CONDITIONS MIN. - - - - - - 65 - BS108 MAX. 200 20 250 1 1 150 150 UNIT V V m A A W °C °C THERMAL RESISTANCE SYMBOL Rth j-a Note 1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum 10 × 10 mm CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) RDS(on)  Yfs Ciss Coss Crss PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage drain-source on-resistance transfer admittance input capacitance output capacitance feedback capacitance CONDITIONS ID = 10 µA; VGS = 0 VDS = 160 V; VGS = 0 ±VGS = 20 V; VDS = 0 ID = 1 m A; VGS = VDS ID = 100 m A; VGS = 2.8 V ID = 300 m A; VDS = 25 V VDS = 25 V; VGS = 0; f = 1 MHz VDS = 25 V; VGS = 0; f = 1 MHz VDS = 25 V; VGS = 0; f = 1 MHz MIN. 200 - - 0.4 - 200 - - - TYP. MAX. UNIT - - -...