| Part number | BS108 |
|---|---|
| Datasheet | BS108_MotorolaInc.pdf |
| File Size | 58.88 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | 200 VOLTS N-CHANNEL TMOS |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS108/D Logic Level TMOS BS108 ® 1 DRAIN N Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. The Power Dissipation of the package may result in a lower continuous drain...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BS108 | N-channel enhancement mode vertical D-MOS transistor | NXP |
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BS108 | DMOS Transistors | General Semiconductor |
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BS108 | Small Signal MOSFET | ON Semiconductor |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| BS107 | TMOS Switching(N-Channel-Enhancement) |
| BS107A | N-Channel MOSFET |
| BS170 | N-channel MOSFET |
