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BS108. For precise diagrams, and layout, please refer to the original PDF.
BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 This MOSFET is designed for high voltage, high speed switching applications such as line drive...
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for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. Features • Low Drive Requirement, VGS = 3.0 V max • Inherent Current Sharing Capability Permits Easy Paralleling of many Devices • AEC Qualified • PPAP Capable • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDSS 200 Vdc Gate−Source Voltage VGS ±20 Vdc Drain Current Continuous (Note 1) Pulsed (Note 2) mAdc ID 250 IDM 500 Total Power Dissipation @ TA = 25°C Derate above TA = 25°C PD 350 mW 6.