BS108
BS108 is Small Signal MOSFET manufactured by onsemi.
Features
- Low Drive Requirement, VGS = 3.0 V max
- Inherent Current Sharing Capability Permits Easy Paralleling of many Devices
- AEC Qualified
- PPAP Capable
- This is a Pb- Free Device-
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain
- Source Voltage
VDSS
Vdc
Gate- Source Voltage
±20
Vdc
Drain Current Continuous (Note 1) Pulsed (Note 2) m Adc
Total Power Dissipation @ TA = 25°C Derate above TA = 25°C
350 m W
6.4 m W/°C
Operating and Storage Temperature Range TJ, Tstg
- 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.
250 m AMPS 200 VOLTS RDS(on) = 8 W
N- Channel D
1 2 3
MARKING DIAGRAM
TO- 92 CASE 29- 11
STYLE 30
A BS108 YWW G
BS108 = Device Code
= Assembly...
