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BS108
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level
N−Channel TO−92
This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers.
Features
• Low Drive Requirement, VGS = 3.0 V max • Inherent Current Sharing Capability Permits Easy Paralleling of
many Devices
• AEC Qualified • PPAP Capable • This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain −Source Voltage
VDSS
200
Vdc
Gate−Source Voltage
VGS
±20
Vdc
Drain Current Continuous (Note 1) Pulsed (Note 2)
mAdc
ID
250
IDM
500
Total Power Dissipation @ TA = 25°C Derate above TA = 25°C
PD
350
mW
6.
BS108 Datasheet
