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  ON Semiconductor Electronic Components Datasheet  

C106B Datasheet

Sensitive Gate Silicon Controlled Rectifiers

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C106 Series
Preferred Devices
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light, and speed control; process and
remote control, and warning systems where reliability of operation is
important.
Glassivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
High Heat Dissipation and Durability
Sensitive Gate Triggering
Device Marking: Device Type, e.g., C106B, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off–State Voltage (Note 1)
(Sine Wave, 50–60 Hz, RGK = 1 k,
TC = –40° to 110°C)
C106B
C106D, C106D1
C106M, C106M1
VDRM,
VRRM
Volts
200
400
600
On-State RMS Current
(180° Conduction Angles, TC = 80°C)
Average On–State Current
(180° Conduction Angles, TC = 80°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = +110°C)
Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS)
IT(AV)
ITSM
I2t
4.0 Amps
2.55 Amps
20 Amps
1.65
A2s
Forward Peak Gate Power
(Pulse Width v1.0 µsec, TC = 80°C)
Forward Average Gate Power
(Pulse Width v1.0 µsec, TC = 80°C)
Forward Peak Gate Current
(Pulse Width v1.0 µsec, TC = 80°C)
Operating Junction Temperature Range
PGM
0.5 Watt
PG(AV) 0.1 Watt
IGM 0.2 Amp
TJ
–40 to
°C
+110
Storage Temperature Range
Tstg
–40 to
°C
+150
Mounting Torque (Note 2)
– 6.0 in. lb.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200F006).
Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink
thermal resistance. Anode lead and heatsink contact pad are common.
http://onsemi.com
SCRs
4 AMPERES RMS
200 thru 600 VOLTS
G
AK
3
21
TO–225AA
(formerly TO–126)
CASE 077
STYLE 2
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
ORDERING INFORMATION
Device
Package
Shipping
C106B
TO225AA
500/Box
C106D
TO225AA
500/Box
C106D1
C106M
TO225AA
TO225AA
500/Box
500/Box
C106M1
TO225AA
500/Box
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 4
1
Publication Order Number:
C106/D


  ON Semiconductor Electronic Components Datasheet  

C106B Datasheet

Sensitive Gate Silicon Controlled Rectifiers

No Preview Available !

C106 Series
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
3.0
°C/W
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
RθJA
TL
75
260
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1000 Ohms)
ON CHARACTERISTICS
TJ = 25°C
TJ = 110°C
IDRM, IRRM
– 10 µA
– 100 µA
Peak Forward On–State Voltage (Note 3)
(ITM = 4 A)
Gate Trigger Current (Continuous dc) (Note 4)
(VAK = 6 Vdc, RL = 100 Ohms)
Peak Reverse Gate Voltage (IGR = 10 µA)
Gate Trigger Voltage (Continuous dc) (Note 4)
(VAK = 6 Vdc, RL = 100 Ohms)
Gate Non–Trigger Voltage (Continuous dc) (Note 4)
(VAK = 12 V, RL = 100 Ohms, TJ = 110°C)
Latching Current
(VAK = 12 V, IG = 20 mA)
Holding Current (VD = 12 Vdc)
(Initiating Current = 20 mA, Gate Open)
DYNAMIC CHARACTERISTICS
TJ = 25°C
TJ = –40°C
TJ = 25°C
TJ = –40°C
TJ = 25°C
TJ = –40°C
TJ = 25°C
TJ = –40°C
TJ = +110°C
VTM
IGT
VGRM
VGT
VGD
IL
IH
– – 2.2 Volts
µA
– 15 200
– 35 500
– – 6.0 Volts
Volts
0.4 0.60 0.8
0.5 0.75 1.0
0.2 –
– Volts
mA
– 0.20 5.0
– 0.35 7.0
mA
– 0.19 3.0
– 0.33 6.0
– 0.07 2.0
Critical Rate–of–Rise of Off–State Voltage
(VAK = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,
TJ = 110°C)
3. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
4. RGK is not included in measurement.
dv/dt
– 8.0 – V/µs
http://onsemi.com
2


Part Number C106B
Description Sensitive Gate Silicon Controlled Rectifiers
Maker ON Semiconductor
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C106B Datasheet PDF






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