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ECH8309 - P-Channel Power MOSFET

ON Semiconductor

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Datasheet Details

Part number	ECH8309
Manufacturer	ON Semiconductor ↗
File Size	213.01 KB
Description	P-Channel Power MOSFET
Datasheet	ECH8309-ONSemiconductor.pdf

ECH8309 Product details

Features

1.8V drive.
Halogen free compliance.
Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --12 ±10 --9.5 --40 1.5 150 --55 to +150 Unit V V A A W °C °C.

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Published: Oct 30, 2015 |