ECH8655R
ECH8655R is N-Channel Power MOSFET manufactured by onsemi.
Features
- Low ON-resistance
- 2.5V drive
- mon-drain type
- Protection diode in
- Built-in gate protection resistor
- Best suited for Li B charging and discharging switch
- Halogen free pliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS ID IDP PD PT Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm)
Ratings 24
±12 9
60 1.4 1.5 150 --55 to +150
Unit V V A A W W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7011A-003
Top View 2.9
ECH8655R-TL-H
0.15 0 to 0.02
Product & Package Information
- Package
: ECH8
- JEITA, JEDEC
:-
- Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
Lot No.
2.8 0.9 0.25 2.3 0.25
1 0.65
4...
