FCH041N60E Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 36 mW
- Ultra Low Gate Charge (Typ. Qg = 285 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 735 pF)
- 100% Avalanche Tested
- An Integrated Gate Resistor
- This Device is Pb-Free, Halide Free and is RoHS pliant
