FCH041N60E Datasheet - ON Semiconductor

N-Channel MOSFET

FCH041N60E Features

* 650 V @ TJ = 150°C

* Typ. RDS(on) = 36 mW

* Ultra Low Gate Charge (Typ. Qg = 285 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 735 pF)

* 100% Avalanche Tested

* An Integrated Gate Resistor

* This Device is Pb

* Free, Halide

FCH041N60E General Description

SUPERFET II MOSFET is onsemi’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv.

FCH041N60E Datasheet (327.82 KB)