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FCH041N65EFLN4 - N-Channel MOSFET

Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 36 mW.
  • Ultra Low Gate Charge (Typ. Qg = 229 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 631 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FCH041N65EFLN4
Manufacturer onsemi
File Size 527.59 KB
Description N-Channel MOSFET
Datasheet download datasheet FCH041N65EFLN4 Datasheet
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Full PDF Text Transcription

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MOSFET – Power, N-Channel, SUPERFET) II, FRFET) 650 V, 76 A, 41 mW FCH041N65EFLN4 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET II MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET II FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 36 mW • Ultra Low Gate Charge (Typ.
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