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FCPF190N60-F152 - N-Channel MOSFET

Description

N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ

Features

  • 650 V @TJ = 150°C.
  • Max. RDS(on) = 199 mΩ.
  • Ultra low gate charge (typ. Qg = 57 nC).
  • Low effective output capacitance (typ. Coss. eff = 160 pF).
  • 100% avalanche tested SuperFET®II MOSFET is ON Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resis-tance and lower gate charge performance. This advanced tech-nology is tailored to minimize conduction loss,.

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FCPF190N60-F152 — N-Channel MOSFET FCPF190N60-F152 Description N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features • 650 V @TJ = 150°C • Max. RDS(on) = 199 mΩ • Ultra low gate charge (typ. Qg = 57 nC) • Low effective output capacitance (typ. Coss.eff = 160 pF) • 100% avalanche tested SuperFET®II MOSFET is ON Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resis-tance and lower gate charge performance. This advanced tech-nology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
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