FCPF190N60-F152 mosfet equivalent, n-channel mosfet.
* 650 V @TJ = 150°C
* Max. RDS(on) = 199 mΩ
* Ultra low gate charge (typ. Qg = 57 nC)
* Low effective output capacitance (typ. Coss.eff = 160 pF)
* 10.
N-Channel SuperFET® II MOSFET
600 V, 20.2 A, 199 mΩ Features
* 650 V @TJ = 150°C
* Max. RDS(on) = 199 mΩ
* Ultra low gate charge (typ. Qg = 57 nC)
* Low effective output capacitance (typ. Coss.eff = 160 pF)
* 100% avalanche teste.
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