Datasheet4U Logo Datasheet4U.com

FCPF190N60-F152 - N-Channel MOSFET

General Description

N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ

Key Features

  • 650 V @TJ = 150°C.
  • Max. RDS(on) = 199 mΩ.
  • Ultra low gate charge (typ. Qg = 57 nC).
  • Low effective output capacitance (typ. Coss. eff = 160 pF).
  • 100% avalanche tested SuperFET®II MOSFET is ON Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resis-tance and lower gate charge performance. This advanced tech-nology is tailored to minimize conduction loss,.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FCPF190N60 N-Channel MOSFET Fairchild Semiconductor
FCPF190N60 N-Channel MOSFET INCHANGE
FCPF190N60E MOSFET Fairchild Semiconductor
FCPF190N60E N-Channel MOSFET INCHANGE
FCPF190N65FL1 N-Channel MOSFET INCHANGE

Other Datasheets by onsemi

Part Number Description
FCPF190N60-F154 N-Channel MOSFET
FCPF190N60 N-Channel MOSFET
FCPF190N60E N-Channel MOSFET
FCPF190N60E-F154 N-Channel MOSFET
FCPF190N65F N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCPF190N60-F152 — N-Channel MOSFET FCPF190N60-F152 Description N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features • 650 V @TJ = 150°C • Max. RDS(on) = 199 mΩ • Ultra low gate charge (typ. Qg = 57 nC) • Low effective output capacitance (typ. Coss.eff = 160 pF) • 100% avalanche tested SuperFET®II MOSFET is ON Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resis-tance and lower gate charge performance. This advanced tech-nology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.