FCPF380N60E mosfet equivalent, n-channel mosfet.
* 650 V @ TJ = 150°C
* Typ. RDS(on) = 320 mW
* Ultra Low Gate Charge (Typ. Qg = 34 nC)
* Low Effective Output Capacitance (Typ. Coss.eff = 97 pF)
* 10.
* Computing / Display Power Supplies
* Telecom / Server Power Supplies
* Industrial Power Supplies
* Lig.
SUPERFET II MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize.
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