FDB0690N1507L
FDB0690N1507L is N-Channel Power MOSFET manufactured by onsemi.
Features
- Max r DS(on) = 6.9 mΩ at VGS = 10 V, ID = 17 A
- Fast Switching Speed
- Low Gate Charge
General Description
This N-Channel MOSFET is produced using ON Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- Ro HS pliant
Applications
- Industrial Motor Drive
- Industrial Power Supply
- Industrial Automation
- Battery Operated tools
- Battery Protection
- Solar Inverters
- UPS and Energy Inverters
- Energy Storage
- Load Switch
123 567
1. Gate 2. Source/Kelvin Sense
3. Source/Kelvin Sense
4. Drain
5. Source
6. Source
7. Source
D2-PAK
(TO263)
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol VDS VGS
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Pulsed
TC = 25°C TC = 100°C
Single Pulse Avalanche Energy
Power...
