FDB0690N1507L mosfet equivalent, n-channel power mosfet.
* Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 17 A
* Fast Switching Speed
* Low Gate Charge
General Description
This N-Channel MOSFET is produced using ON Semic.
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability
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