FDB12N50F Datasheet - ON Semiconductor

N-Channel MOSFET

FDB12N50F Features

* RDS(on) = 590 m (Typ.) @ VGS = 10 V, ID = 6 A

* Low Gate Charge (Typ. 21 nC)

* Low Crss (Typ. 11 pF)

* 100% Avalanche Tested

* Improve dv/dt Capability

* RoHS Compliant Applications

* Lighting

* Uninterruptible Power Supply

FDB12N50F General Description

UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFE.

FDB12N50F Datasheet (776.86 KB)