Datasheet Summary
FDB86563-F085 N-Channel PowerTrench® MOSFET
N-Channel PowerTrench® MOSFET
60 V, 110 A, 1.8 mΩ
Features
- Typical RDS(on) = 1.6 mΩ at VGS = 10V, ID = 80 A
- Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A
- UIS Capability
- RoHS pliant
- Qualified to AEC Q101
Applications
- Automotive Engine Control
- PowerTrain Management
- Solenoid and Motor Drivers
- Integrated Starter/Alternator
- Primary Switch for 12V Systems
TO-263
FDB SERIES
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current
- Continuous (VGS=10) (Note 1) Pulsed Drain Current
Single Pulse...