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FDB86563-F085 - N-Channel Power MOSFET

Features

  • Typical RDS(on) = 1.6 mΩ at VGS = 10V, ID = 80 A.
  • Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A.
  • UIS Capability.
  • RoHS Compliant.
  • Qualified to AEC Q101.

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FDB86563-F085 N-Channel PowerTrench® MOSFET FDB86563-F085 N-Channel PowerTrench® MOSFET 60 V, 110 A, 1.8 mΩ Features „ Typical RDS(on) = 1.6 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems D D G GS TO-263 S FDB SERIES MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
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