FDC637AN
FDC637AN is N-Channel MOSFET manufactured by onsemi.
Single N-Channel, 2.5V Specified Power Trench TM MOSFET
General Description
Features
This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
- 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V
RDS(on) = 0.032 Ω @ VGS = 2.5 V
- Fast switching speed.
These devices have been designed to offer exceptional power dissipation in a very small footprint pared with bigger SO-8 and TSSOP-8 packages.
Applications
- DC/DC converter
- Load switch
- Battery Protection
- Low gate charge (10.5n C typical).
- High performance trench technology for extremely low RDS(ON).
- Super SOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Super SOT...
