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FDC637AN - N-Channel MOSFET

Features

  • This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
  • 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V RDS(on) = 0.032 Ω @ VGS = 2.5 V.
  • Fast switching speed. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 pack.

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Datasheet Details

Part number FDC637AN
Manufacturer ON Semiconductor
File Size 274.54 KB
Description N-Channel MOSFET
Datasheet download datasheet FDC637AN Datasheet
Additional preview pages of the FDC637AN datasheet.

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Full PDF Text Transcription

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FDC637AN FDC637AN Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. • 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V RDS(on) = 0.032 Ω @ VGS = 2.5 V • Fast switching speed. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. Applications • DC/DC converter • Load switch • Battery Protection • Low gate charge (10.5nC typical). • High performance trench technology for extremely low RDS(ON).
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