FDC640P Description
This P−Channel 2.5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V 12 V).
FDC640P Key Features
- 4.5 V, -20 V. RDS(ON) = 0.053 W @ VGS = -4.5 V
- Rugged Gate Rating (±12 V)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- This is a Pb-Free and Halide Free Device