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FDC6506P - Dual P-Channel MOSFET

Key Features

  • These P-Channel logic level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
  • -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V.
  • Low gate charge (2.3nC typical). These devices have been designed to offer exceptional power dissipation in a very small footprint for.

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Datasheet Details

Part number FDC6506P
Manufacturer onsemi
File Size 165.13 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet FDC6506P Datasheet

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Full PDF Text Transcription (Reference)

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FDC6506P FDC6506P Dual P-Channel Logic Level PowerTrench™ MOSFET General Description Features These P-Channel logic level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. • -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V • Low gate charge (2.3nC typical). These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Applications • Load switch • Battery protection • Power management • Fast switching speed.