FDC8602 Datasheet Dual N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – Dual, N-Channel, Shielded Gate, POWERTRENCH) 100 V, 1.

Datasheet Details

This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized for RDS(on), switching performance and ruggedness.

Shielded Gate MOSFET Technology.
Max RDS(on) = 350 mW at VGS = 10 V, ID = 1.2 A.
Max RDS(on) = 575 mW at VGS = 6 V, ID = 0.9 A.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

Brand Logo	Part Number	Description	Manufacturer
	FDC8602	Dual N-Channel Shielded Gate PowerTrench MOSFET	Fairchild Semiconductor