FDC8602 - Dual N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDC8602
Manufacturer	ON Semiconductor
File Size	358.91 KB
Description	Dual N-Channel MOSFET
Datasheet	FDC8602 Datasheet
Additional preview pages of the FDC8602 datasheet.

Product details

Description

This N Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology.This process has been optimized for RDS(on), switching performance and ruggedness.

Features

Shielded Gate MOSFET Technology.
Max RDS(on) = 350 mW at VGS = 10 V, ID = 1.2 A.
Max RDS(on) = 575 mW at VGS = 6 V, ID = 0.9 A.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 21, 2023 |